Image
2317005544 / retail@media-ram.gr ΔΕ-ΠΑ 09:30-18:00
ΕΣΠΑ
0Στο Καλάθι
 

ΑΝΤΑΛΛΑΚΤΙΚΑ LAPTOP

4456
CH-FIC028
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4466
CH-FIC026
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
8880
CH-FIC023
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
6690
CH-FIC024
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
6900
CH-FIC021
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
7904
CH-FIC022
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4800
CH-FIC020
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4502
CH-FIC018
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
8884
CH-FIC019
N-Channel PowerTrench MOSFET FDS8884VDS=30VID=8.5A @ VGS=10VID=7.5A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4606
CH-FIC017
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4812
CH-FIC014
30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4496
CH-FIC015
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application.
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4435
CH-FIC012
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4468
CH-FIC013
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4168
CH-FIC011
VDS=30VID=24A @ VGS=10VID=21A @ VGS=4.5V
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4511
CH-FIC009
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4932
CH-FIC010
FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically...
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4925b
CH-FIC007
Dual P-Channel D-S modeVDS=-30VID=-7.1A @ VGS=-10VID=-5.5A @ VGS=-4.5V
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4835b
CH-FIC008
4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4856
CH-FIC006
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω
3.10 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
Εμφάνιση 20 Προϊόντων
Product filters
Διαθεσιμότητα
Κατασκευαστής
Τιμή

€  –  €

  • 1€
  • 367€